Current-voltage calculations for InAs/AlSb resonant-tunneling diodes
Identifieur interne : 01BC88 ( Main/Repository ); précédent : 01BC87; suivant : 01BC89Current-voltage calculations for InAs/AlSb resonant-tunneling diodes
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Abstract
One expects that the one-dimensional approximation for the resonant-tunneling-diode tunneling current should be very accurate in the InAs/AlSb materials system, with its large barriers and largely Γ-like tunneling. We study this approximation as well as the two-dimensional expression, which takes into account the explicit dependence of the transmission coefficient on the magnitude of the in-plane wave vector k*.parallel.*. We find that even here the one-dimensional approximation fails, producing curves that are qualitatively very different from those of the two-dimensional approximation and study the reasons for the differences. We also briefly examine the angular dependence of the transmission coefficients, the results indicating that the two-dimensional approximation is likely to be fairly good for the structures studied.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Current-voltage calculations for InAs/AlSb resonant-tunneling diodes</title><author><name sortKey="Boykin, Timothy B" uniqKey="Boykin T">Timothy B. Boykin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, Alabama 35899</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Alabama</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0124324</idno><date when="1995-02-15">1995-02-15</date><idno type="stanalyst">PASCAL 95-0124324 AIP</idno><idno type="RBID">Pascal:95-0124324</idno><idno type="wicri:Area/Main/Corpus">01D186</idno><idno type="wicri:Area/Main/Repository">01BC88</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. Rev. B</title><title level="j" type="main">Physical Review B (Condensed Matter)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term><term>Effective mass</term><term>Heterostructures</term><term>IV characteristic</term><term>Indium arsenides</term><term>Resonance</term><term>Theoretical study</term><term>Transport processes</term><term>Tunnel diodes</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude théorique</term><term>7320D</term><term>7340G</term><term>7340K</term><term>Indium arséniure</term><term>Aluminium antimoniure</term><term>Hétérostructure</term><term>Diode tunnel</term><term>Résonance</term><term>Caractéristique courant tension</term><term>Phénomène transport</term><term>Masse effective</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">One expects that the one-dimensional approximation for the resonant-tunneling-diode tunneling current should be very accurate in the InAs/AlSb materials system, with its large barriers and largely Γ-like tunneling. We study this approximation as well as the two-dimensional expression, which takes into account the explicit dependence of the transmission coefficient on the magnitude of the in-plane wave vector k<sub>*.parallel.*</sub>. We find that even here the one-dimensional approximation fails, producing curves that are qualitatively very different from those of the two-dimensional approximation and study the reasons for the differences. We also briefly examine the angular dependence of the transmission coefficients, the results indicating that the two-dimensional approximation is likely to be fairly good for the structures studied.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. Rev. B</s0></fA03><fA05><s2>51</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Current-voltage calculations for InAs/AlSb resonant-tunneling diodes</s1></fA08><fA11 i1="01" i2="1"><s1>BOYKIN (Timothy B.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, Alabama 35899</s1><sZ>1 aut.</sZ></fA14><fA20><s1>4289-4295</s1></fA20><fA21><s1>1995-02-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144B</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>95-0124324</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical Review B (Condensed Matter)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>One expects that the one-dimensional approximation for the resonant-tunneling-diode tunneling current should be very accurate in the InAs/AlSb materials system, with its large barriers and largely Γ-like tunneling. We study this approximation as well as the two-dimensional expression, which takes into account the explicit dependence of the transmission coefficient on the magnitude of the in-plane wave vector k<sub>*.parallel.*</sub>. We find that even here the one-dimensional approximation fails, producing curves that are qualitatively very different from those of the two-dimensional approximation and study the reasons for the differences. We also briefly examine the angular dependence of the transmission coefficients, the results indicating that the two-dimensional approximation is likely to be fairly good for the structures studied.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C40G</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C40K</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7340G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7340K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Aluminium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Aluminium antimonides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Hétérostructure</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Heterostructures</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Diode tunnel</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Tunnel diodes</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Résonance</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Resonance</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Caractéristique courant tension</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>IV characteristic</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Phénomène transport</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Transport processes</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Masse effective</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Effective mass</s0></fC03><fN21><s1>074</s1></fN21><fN47 i1="01" i2="1"><s0>9504M0747</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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